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Preliminary
SLD-1026Z
Product Description
Sirenza Microdevices' SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-1026Z is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applications.The power transistor is fabricated using Sirenza's latest, high performance LDMOS II process. This product features a RoHS/WEEE Compliant package with matte tin finish, designated by the `Z' suffix.
Pb
RoHS Compliant & Green Package
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
Functional Schematic Diagram
ESD Protection
Proprietary SOF-26 Package
Product Features
* * * * * * * * * * * *
3 Watt Output P1dB Single Polarity Supply Voltage High Gain: 19 dB at 915 MHz High Efficiency: 44% at 3W CW XeMOS II LDMOS Proprietary Low Thermal Resistance Package Integrated ESD Protection, Class 1B Base Station PA driver Repeaters RFID Military Communication GSM / EDGE / CDMA / WCDMA
Applications
Backside Paddle = Ground
RF Specifications
Symbol Frequency Gain Gain Efficiency Efficiency IRL IRL Parameter Frequency of Operation 3 Watt CW, 902-928 MHz 3 Watt CW, 2110-2170 MHz Drain Efficiency at 3 Watt CW , 915MHz Drain Efficiency at 3 Watt CW , 2140MHz Input Return Loss, 3 Watt Output Power, 915MHz Input Return Loss, 3 Watt Output Power, 2140 MHz 3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz Linearity 3rd Order IMD at 3 Watt PEP (Two Tone), 2140MHz 1dB Compression (P1dB), 915 MHz 1dB Compression (P1dB), 2140 MHz ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation, 3GPP2, Test model 1, 64 DPCH, 67% Clipping, PAR= 9.3 @ 0.01% CCDF IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation, 3GPP2, Test model 1, 64 DPCH, 67% Clipping, PAR= 9.3 @ 0.01% CCDF Thermal Resistance (Junction-to-Case) VDS = 28.0V, IDQ = 50mA, TFlange = 25C Unit MHz dB dB % % dB dB dBc dBc Watt Watt dBc Min 10 Typ 19 14 44 43 -12 -12 -28 -28 3.5 3.0 -48 Max 2700
2 carrier WCDMA performance
dBc C/W
-47 17
RTH Test Conditions
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
DC Specifications
Symbol gm VGS Threshold VGS Quiescent VDS Breakdown Ciss Crss Coss RDSon Parameter Forward Transconductance @ 30mA IDS IDS=3mA, VDS=28V IDS=50mA, VDS=28V 1mA VDS current Input Capacitance (Gate to Source) VGS=0V VDS=28V Reverse Capacitance (Gate to Drain) VGS=0V VDS=28V Output Capacitance (Drain to Source) VGS=0V VDS=28V Drain to Source Resistance, VGS=10V VDS=250mV Unit mA / V Volts Volts Volts pF pF pF 3 Min Typical 150 4.2 4 65 5.2 0.2 3.2 3.0 5 Max
Quality Specifications
Parameter ESD Rating Description Human Body Model Rating 1B
Pin Description
Pin # 1, 3 2 4, 6 5 GND Function NC Gate NC Drain Source, Gnd Description These pins are not connected internal to the package. Bus them to pin 2 as shown in the app circuit. Transistor RF input and gate bias voltage. The gate bias voltage must be temperature compensated to maintain constant bias current over the operating temperature range. Care must be taken to protect against video transients that exceed the maximum input power or voltage. These pins are not connected internal to the package. Bus them to pin 5 as shown in the app circuit. Transistor RF output and drain bias voltage. Typical voltage 28V. These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recommended as shown in the landing pattern.
Pin Diagram
GND 1 ESD Protection 6 5 2
Absolute Maximum Ratings
Parameters Drain Voltage (VDS ) Gate Voltage (VGS) RF Input Power Load Impedance for Continuous Operation Without Damage Output Device Channel Temperature Operating Temperature Range Value 35 20 +30 10:1 +150 -40 to +85 -40 to +150 Unit Volts Volts dBm VSWR C C C
3 GND
4
Storage Temperature Range
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one.
Note 1: Gate voltage must be applied to VGS lead concurrently or after application of drain voltage to prevent potentially destructive oscillations. Bias voltages should never be applied to the transistor unless it is properly terminated on both input and output. Note 2: The required VGS corresponding to a specific IDQ will vary from device to device due to the normal die-to-die variation in threshold voltage with LDMOS transistors. Note 3: The threshold voltage (VGSTH) of LDMOS transistors varies with device temperature. External temperature compensation may be required. See Sirenza application notes AN-067 LDMOS Bias Temperature Compensation.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 400 MHz Application Circuit
60
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz 0
2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=30mA, Freq=450 MHz, Delta F=1 MHz
45 40 35 -25 -30 -35 -40 -45 -50 -55 IMD (dBc)
50 Gain (dB), Efficiency (%)
-10
Gain (dB), Efficiency (%)
40
-20
IMD(dBc), IRL (dB)
30 25 20 15 10 5
30
-30
20
-40
10
Gain IM3 IM7 380 400 420 440
Efficiency IM5 IRL 460 480 500
-50
Gain IM3 IM7
Efficiency IM5
-60 -65 -70
0 Frequency (MHz)
-60 520
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0
CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA, Freq=450 MHz
22 60
50 Gain (dB), Efficiency (%)
-5 Input Return Loss (dB)
21.5
50
40
-10
21 Gain (dB)
40 Efficiency (%)
30
-15
20.5
30
20 Gain Efficiency IRL
-20
20
20
10
-25
19.5
Gain Efficiency
10
0 380 400 420 440 460 480 500 Frequency (MHz)
-30 520
19 0 0.5 1 1.5 2 Pout (W) 2.5 3 3.5 4
0
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 800 MHz Application Circuit
60
50 Gain (dB), Efficiency (%)
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz 0 Gain Efficiency IM3 IM5 IM7 IRL -10 IMD(dBc), IRL (dB)
Gain (dB), Efficiency (%)
2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=30mA, Freq=880 MHz, Delta F=1 MHz
45 40 35 -25 -30 -35 -40 -45 -50 -55 IMD (dBc)
40
-20
30 25 20 15 10 5
30
-30
20
-40
10
-50
Gain IM3 IM7
Efficiency IM5
-60 -65 -70
0 820 840 860 880 900 920 Frequency (MHz)
-60 940
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0
CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA, Freq=880 MHz
20 60
50 Gain (dB), Efficiency (%)
-5 Input Return Loss (dB)
19.5
50
40
-10
19 Gain (dB)
40 Efficiency (%)
30
-15
18.5
30
20 Gain Efficiency IRL
-20
18
20
10
-25
17.5
Gain Efficiency
10
0 820 840 860 880 900 920 Frequency (MHz)
-30 940
17 0 0.5 1 1.5 2 Pout (W) 2.5 3 3.5 4
0
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 800 MHz Application Circuit
CDMA Gain, Efficiency, ACPR, ALT1 vs Pout Vdd=28V, Idq=30mA, Freq=880 MHz 45 40 Gain (dB), Efficiency (%) 35 30 25 20 15 10 5 0 0.01
N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 - 13)
N-CDMA spectrum. Pout= 0.3 W, Vdd=28V, Idq=40mA. PAR = 9.8 dB @ 0.01% Probability on CCDF
-35
20 10 0
ACPR (dB), ALT1 (dB)
1.2288 MHz Channel BW
Gain ACPR
Efficiency ALT1
-40 -45 -50 -55 -60 -65 -70 -75 -80
-10 -20 dB -30 -40 -50 -60 -70 0.876
ALT1 in 30 KHz BW ACPR in 30 KHz BW ACPR in 30 KHz BW ALT1 in 30 KHz BW
0.1 Pout (W PEP)
1
0.878
0.880 Frequency (GHz)
0.882
0.884
CCDF N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 - 13). Single-Carrier Test Signal 100
10 Probability (%)
1
0.1 N-CDMA. 1.2288 MHz Channel Bandwidth. ACPR Measured in 30 KHz Bandwidth @ 750 KHz Offset. ALT1 Measured in 30 KHz Bandwidth @ 1980 KHz Offset. PAR = 9.8
0.01
0.001 0 1 2 3 4 5 6 7 8 9 10 Peak-to-Average (dB)
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 900 MHz Application Circuit
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=50mA, Pout=3W PEP, Delta F=1 MHz Gain IM3 IM7 Efficiency IM5 IRL
2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=50mA, Freq=920 MHz, Delta F=1 MHz
60
0
50 45
-20 -25 -30 -35 IMD (dBc)
Efficiency (%)
50 Gain (dB), Efficiency (%)
-10
Gain (dB), Efficiency (%)
40
IMD(dBc), IRL (dB)
40
-20
35 30 25 20 15 10 5
-40 -45 -50 -55
30
-30
20
-40
10
-50
Gain IM3 IM7
0 0.5 1 1.5 2 2.5
Efficiency IM5
-60 -65 -70
0 850 870 890 910 930 950 Frequency (MHz)
-60 970
0 3 3.5 4 4.5 Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=50mA, Pout=3W
50 45 40 Gain (dB), Efficiency (%) 35 30 25 20 15 10 5 0 850 0 -2 -4 Input Return Loss (dB)
23 24
CW Gain, Efficiency vs Pout Vdd=28V, Idq=50mA, Freq=920 MHz
60
50
Gain Efficiency IRL
-6 -8 -10 -12 -14 -16
22 Gain (dB)
40
21
30
Gain Efficiency
20 20
19
10
-18 -20 970
18 0 1 2 Pout (W) 3 4 5 0
870
890
910
930
950
Frequency (MHz)
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 900 MHz Application Circuit - Data over Temperature
CW Gain vs Pout over Temperature Vdd=28V, Idq=50mA, Freq=940 MHz 22 21 20 50 19 70 60 Efficiency vs Pout over Temperature Vdd=28V, Idq=50mA, Freq=940 MHz
Efficiency (%)
Gain (dB)
18 17 16 15 14 13 0 1 2 3 Pout (W) 4 5 6 t-=85 t=55 t=25 t=0 t=-25
40 30 20 10 0 0 1 2 3 Pout (W) 4 5 6 t-=85 t=55 t=25 t=0 t=-25
IMD3 vs Pout over Temperature Vdd=28V, Idq=50mA, Freq=940 MHz -20 45 40 -25 35 -30 30
2 tone Efficiency vs Pout over Temperature Vdd=28V, Idq=50mA, Freq=940 MHz
Efficiency (%)
IMD3 (dBc)
25 20 15 10 5 t-=85 t=55 t=25 t=0 t=-25
-35 t-=85 -40 t=55 t=25 t=0 -45 t=-25
-50 0 0.5 1 1.5 2 2.5 Pout (W avg)
0 0 0.5 1 1.5 2 2.5 Pout (W avg)
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1840 MHz Application Circuit
2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=30mA, Freq=1840 MHz, Delta F=1 MHz
45 40 35 Gain (dB), Efficiency (%) 30 25 20 15 10 5 0 0 0.5 1 1.5 Pout (W PEP) 2 2.5 3 -25 -30 -35
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz 0 60 Gain Efficiency IM3 IM5 IM7 IRL -10 50
Gain (dB), Efficiency (%)
-40 -45 -50 -55 IMD (dBc)
40
-20
30
-30
20
-40
Gain IM3 IM7
Efficiency IM5
-60
10
-65 -70
-50
0 1780 1800
1820 1840 1860 1880 Frequency (MHz)
-60 1900 1920
CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA, Freq=1840 MHz
17 16.5 16 15.5 Gain (dB) 15 14.5 14 13.5 50 45 40
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0
50 Gain (dB), Efficiency (%)
-5 Input Return Loss (dB)
35 30 25 20 15 Efficiency (%)
40
30
Gain Efficiency IRL
-10
-15
20
-20
Gain
13 12.5 12 0 0.5 1 1.5 2 2.5 3 3.5 Pout (W)
Efficiency
10 5 0
10
-25
-30 0 1760 1780 1800 1820 1840 1860 1880 1900 1920 Frequency (MHz)
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 8
http://www.sirenza.com EDS-104157 Rev F
IMD(dBc), IRL (dB)
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1840 MHz Application Circuit
GSM/EDGE Gain, Efficiency, EVM vs Frequency Vdd=28V, Idq=30mA, Freq=1840 MHz 50 45 40 Gain (dB), Efficiency (%) 35 30 25 20 15 10 5 0 0.01 Gain Efficiency EVM
6 5 4 3 2 1 0 10 9 8 7
GSM/EDGE Spectral regrowth at 400 KHz and 600 KHz vs Pout Vdd=28V, Idq=30mA, Freq=18400 MHz
-50
EVM- Error Vector Magnitude (%)
SR @ 400 KHz
-55 Spectral regrowth (dBc)
SR @ 600 KHz
-60
-65
-70
0.1 Frequency (MHz)
1
10
-75 0.01
0.1 Pout (W PEP)
1
10
GSM / Edge Test Signal Spectrum
10
Reference Pow er
0 -10 -20 dB -30
400 KHz
-40 -50 -60
400 KHz 600 KHz 600 KHz
-70 1.839 1.839 1.839 1.84 1.84 200 KHz 1.84 1.84 1.84 1.841 1.841 MHz Center 1.84 GHz Span 2 1.841
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 9
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1960 MHz Application Circuit
60
50
Gain (dB), Efficiency (%)
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz 0 Gain Efficiency IM3 IM5 IM7 IRL -10
Gain (dB), Efficiency (%)
2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=30mA, Freq=1960 MHz, Delta F=1 MHz
45 40 35 -25 -30 -35 -40 -45 -50 -55 IMD (dBc)
40
-20
IMD(dBc), IRL (dB)
30 25 20 15 10 5
30
-30
20
-40
10
-50
Gain IM3 IM7
Efficiency IM5
-60 -65 -70
-60 0 1880 1900 1920 1940 1960 1980 2000 2020 2040 Frequency (MHz)
0 0 0.5 1 1.5 Pout (W PEP) 2 2.5 3
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0
17 16.5
CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA, Freq=1960 MHz
50 45 40 35 30 25 20 15 Efficiency (%)
50
Gain (dB), Efficiency (%)
-5
16
Input Return Loss (dB)
40
-10
15.5 Gain (dB) 15 14.5 14 13.5
30
Gain Efficiency IRL
-15
20
-20
Gain
10
-25
13 12.5
Efficiency
10 5 0
0 -30 1880 1900 1920 1940 1960 1980 2000 2020 2040 Frequency (MHz)
12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Pout (W)
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 10
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1960 MHz Application Circuit
CW Gain vs Pout over Idq Vdd=28V, Freq=1960 MHz
25
CDMA - Gain, Efficiency, ACPR vs Pout Vdd=28V, Idq=40mA, Freq=1960 MHz
-40
18
17
Gain (dB), Efficiency (%)
20
Gain Efficiency ACPR
-45
15 Idq=50 mA 14 Idq=40 mA Idq=30 mA Idq=20 mA 13 0 0.5 1 1.5 2 2.5 3 3.5 Pout (W)
10
-55
5
-60
N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 - 13)
0 0.01 -65 0.1 Pout (W AVG) 1
CCDF N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 - 13). Single-Carrier Test Signal 100
20
N-CDMA spectrum. Pout= 0.3 W, Vdd=28V, Idq=40mA. PAR = 9.8 dB @ 0.01% Probability on CCDF
10 0
1.2288 MHz Channel BW
10
Probability (%)
1
dB
-10 -20 -30
0.1 N-CDMA. 1.2288 MHz Channel Bandwidth. ACPR Measured in 30 KHz Bandwidth @ 885 KHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
-40 -50 -60
0.01
ACP
ACP
0.001 0 1 2 3 4 5 6 7 8 9 10 Peak-to-Average (dB)
-70 1.956
1.958
1.96 Frequency (GHz)
1.962
1.964
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 11
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ACPR (dBc)
Gain (dB)
16
15
-50
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 2140 MHz Application Circuit
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz 60 Gain IM3 IM7 Efficiency IM5 IRL 0
40 35 30
2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=30mA, Freq=2140 MHz, Delta F=1 MHz
-20 -25 -30 -35 -40 -45 -50 -55 -60 0 0.5 1 1.5 Pout (W PEP) 2 2.5 3 IMD (dBc)
50
Gain (dB), Efficiency (%)
-10
Gain (dB), Efficiency (%)
Gain IM3 IM7
Efficiency IM5
40
-20
IMD(dBc), IRL (dB)
25 20 15 10
30
-30
20
-40
10
-50
5
0 2080
2100
2120
2140
2160
2180
-60 2200
0
Frequency (MHz)
16
CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA, Freq=2140 MHz
60
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 50 45 -10 -12 -14 Gain Efficiency IRL -16 -18 -20 -22 -24 -26 -28 -30 2200
Input Return Loss (dB)
15
50
40
Gain (dB), Efficiency (%)
14 Gain (dB) 40 Efficiency (%)
35 30 25 20 15 10 5
13
30
12
20
Gain
11
Efficiency
10
10 0 0.5 1 1.5 2 2.5 3 3.5 Pout (W)
0
0 2080
2100
2120
2140
2160
2180
Frequency (MHz)
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 12
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 2140 MHz Application Circuit
2 Carrier WCDMA Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=30mA, Freq=2140 MHz, Delta F=10 MHz
20 18 16 Gain (dB), Efficiency (%) 14 12 10 8 6 4 2 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 Pout (W AVG) -40
2 carrier W-CDMA spectrum. Pout= 0.4 W, Vdd=28V, Idq=30mA. PAR = 9.3 dB @ 0.01% Probability on CCDF
10 0 -10
ACPR (dBc), IM3 (dBc) -46 -48 -50 -52
3.84 MHz Channel BW
Gain IM3
Efficiency ACPR
-42 -44
-20 dB -30 -40 -50 -60
IM3 in 3.84 MHz BW ACPR in 3.84 MHz ACPR in 3.84 MHz IM3 in 3.84 MHz BW
3.84 MHz Channel Bandwidth, PAR = 9.3 dB @ 0.01% Probability (CCDF)
-54 -56 -58 -60 0.45
-70 2.12
2.13
2.14
2.15
2.16
2.17
Frequency (GHz)
Single Carrier WCDMA Gain, Efficiency, ACPR vs Pout Vdd=28V, Idq=30mA, Freq=2140 MHz
20 18 16 Gain (dB), Efficiency (%) 14 12 10 8 6 4 2 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 Pout (W AVG) -40
100
CCDF W-CDMA 3GPP. Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test
Gain ACPR
Efficiency
-42 -44 -46
10 Probability (%)
-50 -52
ACPR (dBc)
-48
1
0.1
3.84 MHz Channel Bandwidth, PAR = 9.3 dB @ 0.01% Probability (CCDF)
-54 -56 -58 -60 0.45
0.01
W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 9.3 dB @ 0.01% Probability on CCDF
0.001 0 1 2 3 4 5 6 7 8 9 10 Peak-to-Average (dB)
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 13
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Impedance data
Impedance Data
Frequency (MHz) 400 450 500 850 880 910 940 960 1800 1840 1880 1930 1960 1990 2110 2140 2170 Zsource 9.3 + j 35.0 9.9 + j 43.0 12.3 + j 30.6 4.0 + j 16.7 3.7 + j 16.0 3.4 + j 15.3 3.4 + j 14.8 3.5 + j 14.2 1.7 - j 2.6 1.9 - j 3.0 2.1 - j 3.5 2.3 - j 3.9 2.5 - j 4.4 2.7 - j 4.9 2.85 - j 5.3 3.1 - j 5.8 3.25 - j 6.2 Zload 80.0 + j 9.4 67.7 + j 5.6 57.3 + j 16.1 20.0 + j 28.0 18.8 + j 30.0 18.0 + j 31.5 18.0 + j 33.5 18.6 + j 35.0 3.0 + j 6.3 3.15 + j 6.15 3.3 + j 6.0 3.45 + j 5.8 3.6 + j 5.7 3.75 + j 5.55 3.9 + j 5.4 4.05 + j 5.25 4.2 + j 5.1
Device under test
Input Matching Network Z source Z load
Output Matching Network
Zsource and Zload are the optimal impedances presented to the SLD-1026Z when operating at 28V, Idq=50mA, Pout=3W PEP
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 14
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Preliminary SLD-1026Z 3 Watt LDMOS FET
400 MHz Application Circuit
To receive Gerber files, DXF drawings, and assembly recommendations for the test board with fixture, contact applications support at support@sirenza.com.
Bill of Materials - 400 MHz Application Circuit
Reference Designation
L1 L3 L2 C10 C1, C2, C11, C20 C18 C19, C22 J1, J2 J3 R1 R2 R3 R30 R5 R7 R9 R90 RT1 U1 6 Screws 6 Washers PCB Heatsink
Description IND, 8.2 nH 5% 0603 IND, 12 nH 5% 0603 IND, 30 nH 5% 0603 CAP 0.1 UF 16V 10% 0603 CAP 1000 PF 50V 10% 603 CAP 10 UF 35V 20% TAN T ELECT CAP 0.1 UF 50V 10% 805 Connector SMA END 0.037 Connector MTA SMD R/A 2 PIN RES 324 1/16W 1% 603 RES 200 Ohm 0603 POT TRIM 500 OHM 2MM RES 49.9 1/16W 1% 603 RES 130 1/16W 1% 603 RES 210 1/16W 1% 603 RES 0 1/16W 5% 603 RES 1.0K 1/16W 1% 603 THERMISTOR 100K 5% 603 IC VOLT REG 100 MA 5 V SOT-23 SCREW #2-56 PHILIPS PAN HEAD WASHER #2 FLAT SS PCB, 30 mils thick Dk=3.48 machined aluminum
Mfg Coilcraft Coilcraft Coilcraft AVX AVX Kemet Panasonic Johnson Amp Panasonic Panasonic Panasonic Panasonic Panasonic Phillips Panasonic Panasonic Panasonic National various various Rogers various
Mfg part # 0603CS-8N2XJLW 0603CS-12NXJLW 0603CS-30NXJLW 0603YG104ZA2A 06035C102KAT2A T494D106M035AS ECJ2YB1H104K 142-0751-821 640455-2 ERJ-3EKF3240V ECR-104493-201 EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V ERT-J1VV104J LM3480IM3-5.0 4350 -
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 15
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
800 MHz Application Circuit
To receive Gerber files, DXF drawings, and assembly recommendations for the test board with fixture, contact applications support at support@sirenza.com.
Bill of Materials - 800 MHz Application Circuit
Reference Designation Description
C1, C2 C12,C21 C5 L1 C10 C11, C20 C18 C19, C22 J1, J2 J3 R1 R2 R3 R30 R5 R7 R9 R90 RT1 U1 6 Screws 6 Washers PCB Heatsink
CAP 68 PF 250V 5% 0603 CAP, 100 PF, 50V, 5%, 0402 CAP 0.5 PF 250V +/- 0.1pF 0603 IND, 9.5 nH 5% 0603 CAP 0.1 UF 16V 10% 0603 CAP 1000 PF 50V 10% 603 CAP 10 UF 35V 20% TAN T ELECT CAP 0.1 UF 50V 10% 805 Connector SMA END 0.037 Connector MTA SMD R/A 2 PIN RES 324 1/16W 1% 603 RES 2.7 Ohm 0603 POT TRIM 500 OHM 2MM RES 49.9 1/16W 1% 603 RES 130 1/16W 1% 603 RES 210 1/16W 1% 603 RES 0 1/16W 5% 603 RES 1.0K 1/16W 1% 603 THERMISTOR 100K 5% 603 IC VOLT REG 100 MA 5 V SOT-23 SCREW #2-56 PHILIPS PAN HEAD WASHER #2 FLAT SS PCB, 30 mils thick Dk=3.48 machined aluminum
Mfg ATC Phillips ATC Coilcraft AVX AVX Kemet Panasonic Johnson Amp Panasonic Panasonic Panasonic Panasonic Panasonic Phillips Panasonic Panasonic Panasonic National various various Rogers various
Mfg part # 600S680JT250XT 0402CG101J9B200 600S0R5BT250XT 0603CS-9N5XJLW 0603YG104ZA2A 06035C102KAT2A T494D106M035AS ECJ2YB1H104K 142-0751-821 640455-2 ERJ-3EKF3240V ECR-104493-2R7 EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V ERT-J1VV104J LM3480IM3-5.0 4350 -
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 16
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
900 MHz Application Circuit
To receive Gerber files, DXF drawings, and assembly recommendations for the test board with fixture, contact applications support at support@sirenza.com.
Bill of Materials - 900 MHz Application Circuit
Reference Designation
C1 C2 C21 L1 C10 C11, C20 C12 C18 C19, C22 J1, J2 J3 R1 R2 R3 R30 R5 R7 R9 R90 RT1 U1 6 Screws 6 Washers PCB Heatsink
Description CAP 9.2 PF 250V 5% 0603 CAP 68 PF 250V 5% 0603 CAP 56 PF 250V 5% 0603 IND, 18 nH 5% 0603 CAP 0.1 UF 16V 10% 0603 CAP 1000 PF 50V 10% 603 CAP 68PF 250V 5% 603 LF CAP 10 UF 35V 20% TAN T ELECT CAP 0.1 UF 50V 10% 805 Connector SMA END 0.037 Connector MTA SMD R/A 2 PIN RES 324 1/16W 1% 603 RES 2.7 Ohm 0603 POT TRIM 500 OHM 2MM RES 49.9 1/16W 1% 603 RES 130 1/16W 1% 603 RES 210 1/16W 1% 603 RES 0 1/16W 5% 603 RES 1.0K 1/16W 1% 603 THERMISTOR 100K 5% 603 IC VOLT REG 100 MA 5 V SOT-23 SCREW #2-56 PHILIPS PAN HEAD WASHER #2 FLAT SS PCB, 30 mils thick Dk=3.48
Mfg ATC ATC ATC Coilcraft AVX AVX ATC Kemet Panasonic Johnson Amp Panasonic Panasonic Panasonic Panasonic Panasonic Phillips Panasonic Panasonic Panasonic National various various Rogers
Mfg part # 600S9R2JT250XT 600S680JT250XT 600S560JT250XT 0603CS-180XJB 0603YG104ZA2A 06035C102KAT2A 600S680JT250XT T494D106M035AS ECJ2YB1H104K 142-0751-821 640455-2 ERJ-3EKF3240V ECR-104493-2R7 EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V ERT-J1VV104J LM3480IM3-5.0 4350
machined aluminum
various
-
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 17
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
1840 MHz Application Circuit
To receive Gerber files, DXF drawings, and assembly recommendations for the test board with fixture, contact applications support at support@sirenza.com.
Bill of Materials - 1840 MHz Application Circuit
Reference Designation Description
C1, C2 C4 C5 C6 C21 C10 C11, C20 C18 C19, C22 J1, J2 J3 R1 R2 R3 R30 R5 R7 R9 R90 R31, R32 RT1 U1 6 Screws 6 Washers PCB Heatsink
CAP 27 PF 250V 5% 0603 CAP 4.7 PF 250V 1% 0603 CAP 2.7 PF 250V 1% 0603 CAP 1.5 PF 250V 1% 0603 CAP 27 PF 250V 5% 0402 CAP 0.1 UF 16V 10% 0603 CAP 1000 PF 50V 10% 603 CAP 10 UF 35V 20% TAN T ELECT CAP 0.1 UF 50V 10% 805 Connector SMA END 0.037 Connector MTA SMD R/A 2 PIN RES 324 1/16W 1% 603 RES 2.7 Ohm 0402 POT TRIM 500 OHM 2MM RES 49.9 1/16W 1% 603 RES 130 1/16W 1% 603 RES 210 1/16W 1% 603 RES 0 1/16W 5% 603 RES 1.0K 1/16W 1% 603 RES 1.8 OHM, 1%, 1/16W, 0402 THERMISTOR 100K 5% 603 IC VOLT REG 100 MA 5 V SOT-23 SCREW #2-56 PHILIPS PAN HEAD WASHER #2 FLAT SS PCB, 30 mils thick Dk=3.48 machined aluminum
Mfg ATC ATC ATC ATC ATC AVX AVX Kemet Panasonic Johnson Amp Panasonic Panasonic Panasonic Panasonic Panasonic Phillips Panasonic Panasonic Panasonic Panasonic National various various Rogers various
Mfg part # 600S270JT250XT 600S4R7BT250XT 600S2R7BT250XT 600S1R5BT250XT 600L270JT200T 0603YG104ZA2A 06035C102KAT2A T494D106M035AS ECJ2YB1H104K 142-0751-821 640455-2 ERJ-3EKF3240V ERJ-2GEJ2R7X EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V ERJ-2RKF1R8V ERT-J1VV104J LM3480IM3-5.0 4350 -
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 18
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
1960 MHz Application Circuit
To receive Gerber files, DXF drawings, and assembly recommendations for the test board with fixture, contact applications support at support@sirenza.com.
Bill of Materials - 1960 MHz Application Circuit
Reference Designation Description
C1, C2 C4 C5 C6 C21 C10 C11, C20 C18 C19, C22 J1, J2 J3 R1 R2 R3 R30 R5 R7 R9 R90 RT1 U1 6 Screws 6 Washers PCB Heatsink
CAP 27 PF 250V 5% 0603 CAP 4.7 PF 250V 1% 0603 CAP 2.2 PF 250V 1% 0603 CAP 2.0 PF 250V 1% 0603 CAP 27 PF 250V 5% 0402 CAP 0.1 UF 16V 10% 0603 CAP 1000 PF 50V 10% 603 CAP 10 UF 35V 20% TAN T ELECT CAP 0.1 UF 50V 10% 805 Connector SMA END 0.037 Connector MTA SMD R/A 2 PIN RES 324 1/16W 1% 603 RES 2.7 Ohm 0402 POT TRIM 500 OHM 2MM RES 49.9 1/16W 1% 603 RES 130 1/16W 1% 603 RES 210 1/16W 1% 603 RES 0 1/16W 5% 603 RES 1.0K 1/16W 1% 603 THERMISTOR 100K 5% 603 IC VOLT REG 100 MA 5 V SOT-23 SCREW #2-56 PHILIPS PAN HEAD WASHER #2 FLAT SS PCB, 30 mils thick Dk=3.48 machined aluminum
Mfg ATC ATC ATC ATC ATC AVX AVX Kemet Panasonic Johnson Amp Panasonic Panasonic Panasonic Panasonic Panasonic Phillips Panasonic Panasonic Panasonic National various various Rogers various
Mfg part # 600S270JT250XT 600S4R7BT250XT 600S2R2BT250XT 600S2R0BT250XT 600L270JT200T 0603YG104ZA2A 06035C102KAT2A T494D106M035AS ECJ2YB1H104K 142-0751-821 640455-2 ERJ-3EKF3240V ERJ-2GEJ2R7X EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V ERT-J1VV104J LM3480IM3-5.0 4350 -
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 19
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
2140 MHz Application Circuit
To receive Gerber files, DXF drawings, and assembly recommendations for the test board with fixture, contact applications support at support@sirenza.com.
Bill of Materials - 2140 MHz Application Circuit
Reference Designation Description
C1, C2 C3 C4 C5 C6 C21 C10 C11, C20 C18 C19, C22 J1, J2 J3 R1 R2 R3 R30 R5 R7 R9 R90 RT1 U1 6 Screws 6 Washers PCB Heatsink
CAP 27 PF 250V 5% 0603 CAP 2.4 PF 250V 1% 0603 CAP 0.7 PF 250V 1% 0603 CAP 3.0 PF 250V 1% 0603 CAP 2.2 PF 250V 1% 0603 CAP 27 PF 250V 5% 0402 CAP 0.1 UF 16V 10% 0603 CAP 1000 PF 50V 10% 603 CAP 10 UF 35V 20% TAN T ELECT CAP 0.1 UF 50V 10% 805 Connector SMA END 0.037 Connector MTA SMD R/A 2 PIN RES 324 1/16W 1% 603 RES 2.7 Ohm 0402 POT TRIM 500 OHM 2MM RES 49.9 1/16W 1% 603 RES 130 1/16W 1% 603 RES 210 1/16W 1% 603 RES 0 1/16W 5% 603 RES 1.0K 1/16W 1% 603 THERMISTOR 100K 5% 603 IC VOLT REG 100 MA 5 V SOT-23 SCREW #2-56 PHILIPS PAN HEAD WASHER #2 FLAT SS PCB, 30 mils thick Dk=3.48 machined aluminum
Mfg ATC ATC ATC ATC ATC ATC AVX AVX Kemet Panasonic
Mfg part # 600S270JT250XT 600S2R4BT250XT 600S0R7BT250XT 600S3R0BT250XT 600S2R2BT250XT 600L270JT200T 0603YG104ZA2A 06035C102KAT2A T494D106M035AS ECJ2YB1H104K
Johnson Amp Panasonic Panasonic Panasonic Panasonic Panasonic Phillips Panasonic Panasonic Panasonic National various various Rogers various
142-0751-821 640455-2 ERJ-3EKF3240V ERJ-2GEJ2R7X EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V ERT-J1VV104J LM3480IM3-5.0 4350 -
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 20
http://www.sirenza.com EDS-104157 Rev F
Preliminary SLD-1026Z 3 Watt LDMOS FET
Package Outline (dimensions in mm [in]):
Recommended Metal Land Pattern (dimensions in mm [in]): Part Number Ordering Information
Part Number SLD-1026Z Devices Per Reel 500 Reel Size 7''
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 21
http://www.sirenza.com EDS-104157 Rev F

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